Factory Lead Time  

16 Weeks

Package / Case  

TO-263-7, D2Pak (6 Leads + Tab)

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

7

Weight  

1.59999g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

240A Tc

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Turn Off Delay Time  

195 ns

Power Dissipation (Max)  

290W Tc

Number of Elements  

1

Published  

2013

Series  

HEXFET®, StrongIRFET™

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

6

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G6

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

290W

Case Connection  

DRAIN

Turn On Delay Time  

140 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.95m Ω @ 100A, 10V

Vgs(th) (Max) @ Id  

3.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

9990pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

300nC @ 10V

Rise Time  

120ns

Vgs (Max)  

±20V

Fall Time (Typ)  

86 ns

Continuous Drain Current (ID)  

240A

JEDEC-95 Code  

TO-263CB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free